Micron, Sun Microsystems Partner To Extend Flash-Based Storage Lifespan
The result of the collaboration has yielded production devices capable of achieving one million write cycles that will help prepare the industry for new uses in solid state storage.
Micron Technology has worked with Sun Microsystems to develop a new single-level cell (SLC) enterprise NAND technology that dramatically extends the lifespan of flash-based storage for enterprise applications. The result of the collaboration has yielded production devices capable of achieving one million write cycles that will help prepare the industry for new uses in solid state storage set to come from Sun, Micron and others.
"Micron is pleased to work with Sun on this landmark achievement, enabling the use of flash in new applications that were previously not possible because of the inherent write/erase cycle limitations of standard SLC and MLC NAND," said Brian Shirley, vice president of Micron’s memory group. "We expect this technology to change the enterprise storage hierarchy and be adopted by a wide range of transaction-intensive applications, including solid state drives and storage systems, disk caching, as well as networking and industrial applications."
"As the market for enterprise SSD flash storage technology matures, players like Sun combine technological innovation and next-generation open source software to deliver flash-based storage products that offer simplicity and performance at a fraction of the cost of traditional disk-based storage systems," said Michael Cornwell, lead technologist for flash memory at Sun. "Sun has worked closely with Micron on the design of this next-generation NAND technology to ensure customers are able to leverage next-generation flash technology now and into the future."
Micron is now sampling its Enterprise NAND in densities up to 32 gigabits (Gb). Volume production is expected in the first quarter of 2009. Micron also plans to introduce both SLC and multi-level cell (MLC) enterprise versions on its 34nm NAND process early next year.
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