Samsung unveils first 3D V-NAND based SSDs for enterprises

Samsung has introduced the first solid state drive (SSD) based on its 3D V-NAND technology. Sadly enough, however, the SSD won’t be available to enthusiasts or regular users just yet. The company has announced that its new SSD is only for use in enterprise servers and data centers.

Samsung’s V-NAND SSD comes in 960GB and 480GB variants. Samsung claims that the 960GB version offers more than 20 percent increase in sequential and random write speeds by utilising 64 dies of MLC 3D V-NAND flash, each offering 128 gigabits of storage, with a six-gigabit-per-second SATA interface controller. The new V-NAND SSD also offers 35K program erase cycles and is available in a 2.5-inch form factor measuring 10 cm x 7 cm x 7 mm.

The world’s first SSD to use a Vertical NAND setup

According to Samsung, its proprietary 3D V-NAND technology achieves manufacturing productivity improvements over twice that of 20nm-class planar NAND flash, by using cylinder-shaped 3D Charge Trap Flash cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array.

“By applying our 3D V-NAND – which has overcome the formidable hurdle of scaling beyond the 10-nanometer class, Samsung is providing its global customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption,” said ES Jung, Executive Vice President, Semiconductor R&D center at Samsung Electronics and a keynote speaker at the recent Flash Memory Summit. “As we pioneer a new era of memory technology, we will continue to introduce differentiated green memory products and solutions for the server, mobile and PC markets to help reduce energy waste and to create greater shared value in the enterprise and for consumers.”

The company has also announced that it will be working on bringing the technology to more users. Soon enough, it will be available for home computers as well as enthusiasts.