Hynix Announces 512Mbit Mobile DRAM

Hynix Semiconductor, a noted memory maker has said it has developed the world’s fastest and smallest 512 Megabit mobile DRAM. The new DRAM operates at an industry-leading 200 MHz and processes 1.6 GB of data per second. This speed is about 1.5 times faster than existing mobile DRAM products.

“The product will deliver the memory capacity and speed required for third generation mobile phones that provide new services, such as digital media broadcast (DMB), to subscribers,” the chip maker has said. It is expected that Hynix will combine this 512Mb mobile DRAM and Nand Flash in a multi-chip package which will allow mobile manufacturers to make slimmer mobile phones.